Rotation‐assisted formation of poly(3‐butylthiophene) nanowires: Morphology,microstructure, and electrical property

The phenomenon of “shear‐induced crystallization” is commonly observed for crystalline polymers. Herein, we demonstrate that this concept can be applied to promote the self‐assembly of the conductive nanowires (NWs) in dilute solution. It is found that, by a simple rotation‐assisted method, higher yield of poly(3‐butylthiophene) (P3BT) NWs in anisole solvent was obtained than the case under static condition. While the length as well as the crystal modification of the NWs is not changed. The structural analysis suggests that the P3BT NWs take the crystal modification of form I′ rather than the conventional form I, independent of the sampling condition. This conclusion is further confirmed by investigating the phase transition behavior of the NWs using synchrotron radiation wide‐angle X‐ray diffraction technique. Unexpectedly, the active layer in field‐effect transistor (FET) device fabricated by well‐shaped pure NWs network formed under the rotation field shows the comparable carrier mobility with that fabricated by the ambiguous NWs network obtained under the static condition, which implies that the amorphous part plays an important role in affecting the electrical property. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 1027–1034     

Influence of brush length of PVP chains immobilized on silicon wafers on their blood compatibility

In this study, the influence of variations in chain length of polyvinylpyrrolidone (PVP) brushes on the blood compatibility of silicon wafer surfaces to which they were chemically attached was studied. Si surfaces were functionalized with various lengths of PVP brush using atom transfer radical polymerization technology and confirmed by elliptical polarized light, atom force microscopy, and X‐ray photoelectron spectroscopy. The blood compatibility of these biointerfaces were systematically investigated by measuring protein adsorption, clotting time, platelet adhesion, contact activation, and complement activation. The results indicate that the hemocompatibility of the surfaces was highly related to PVP brush chain length and hydrophilicity of the surfaces. Our results contribute to rational biointerface design for specific biomedical applications. The results reveal that the PVP brushes with a long chain length have great potential for blood contacting applications due to their reduced protein absorption and cell activation following its contact with blood.     

Nd掺杂Mg2Si电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理赝势平面波方法,探究了未掺杂Mg₂Si以及Nd掺杂Mg₂Si的能带结构、态密度和光学性质。计算结果表明: Nd掺杂Mg₂Si后,Mg₂Si禁带宽度从0.290 eV降低到0 eV,导电性能提升;未掺杂的Mg₂Si,当光子能量大于0.9 eV时,才开始慢慢具备吸收能力,掺杂Nd之后的Mg₂Si对能量为0.2 eV的光子就开始吸收,大大改善了Mg₂Si对红外光电子的吸收。掺杂后的光吸收系数和反射率都变小,表明掺杂后的Mg₂Si对光的穿透率增大。计算结果为Mg₂Si材料在光电器件方面的应用提供了理论依据。     

K、Ti掺杂Mg2Si电子结构和光学性质的第一性原理研究

采用第一性原理方法,对本征Mg₂Si以及K和Ti掺杂Mg₂Si的几何结构、电子结构和光学性质进行计算分析。计算结果表明本征Mg₂Si是带隙值为0.290 eV的间接带隙半导体材料,K掺杂Mg₂Si后,Mg₂Si为p型半导体,电子跃迁方式由间接跃迁变为直接跃迁,Ti掺杂Mg₂Si后,Mg₂Si为n型半导体,仍然是间接带隙。K、Ti掺杂后的静介电常数ε₁(0)从20.52分别增大到53.55、69.25,使得掺杂体系对电荷的束缚能力增强。掺杂后,吸收谱和光电导率均发生红移现象,这有效扩大了对可见光的吸收范围,此外可见光区的吸收系数、反射系数以及光电导率都减小,导致透射能力增强,明显改善了Mg₂Si的光学性质。     

The study of the sample size on the transverse magnetoresistance of bismuth nanowires

The effects of sample size on the galvanomagnetice properties of semimetal nanowires are theoretically investigated. Transverse magnetoresistance (TMR) ratios have been calculated within a Boltzmann Transport Equation (BTE) approach by specular reflection approximation. Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. The obtained values are in good agreement with the experimental results, reported by Heremans et al.     

Quantitative evaluation method for electroluminescence images of a‐Si:H thin‐film solar modules

This work presents a method for extracting the absolute local junction voltage of a‐Si:H thin‐film solar cells and modules from electroluminescence (EL) images. It is shown that the electroluminescent emission of a‐Si:H devices follows a diode law with a radiative ideality factor n_r larger than one. We introduce an evaluation method that allows us to determine the absolute local junction voltage in cases of n_r > 1, while existing approaches rely on the assumption of n_r = 1. Furthermore, we find that the experimentally determined values of n_r vary from sample to sample. It is also explained why the derived radiative ideality factor is influenced by the spectral sensitivity of the camera system used in the experiment. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

稀土元素(Ce/Pr/Nd)掺杂Mn_4Si_7的第一性原理计算

利用第一性原理,对稀土元素Ce、Pr或Nd掺杂Mn_4Si_7前后的几何结构、电子结构和光学性质进行了计算与分析.结果表明,掺杂后Mn_4Si_7晶格常数变大,禁带宽度明显减小,由于稀土元素特殊的4f层电子的影响,在费米能级附近出现了杂质能级.掺杂后Mn_4Si_7的介电函数虚部、吸收系数的主峰均出现红移,红外光区的光跃迁强度明显增强,光吸收系数和光电导率均增大.说明掺杂稀土元素Ce、Pr或Nd后改善了Mn_4Si_7在红外光区的光电性能.     

Short range order in molten Al–Si alloys

We have studied the microscopic structure such as, concentration fluctuation in long wavelength limit (S_CC(0)), Warren–Cowely short range order parameter (α ₁), ratio of mutual and intrinsic diffusion coefficients (D _M/D _id) of molten Al–Si alloy at 1700?K using a statistical model of complex formation on the basis of quasi-lattice theory for weakly interacting systems. The approach used in this article reveals that molten Al–Si alloy at 1700?K is a weakly interacting heterocoordinating system and the alloy is more ordered in the Al-rich end.